DB HiTek will use the CBRAM as its embedded NVM option for IoT and other designs using its 180nm CMOS process with an option to extend to 130nm and 90nm nodes, Adesto said.
Adesto recently announced collaboration on CBRAM with Chinese and Russian wafer fabs Shanghai Huali Microelectronics Corp. (HLMC) and Crocus Nano Electronics LLC (Moscow, Russia) to build embedded and stand-alone ReRAM components (see Adesto teams with Russian, Chinese fabs on CBRAM).
Adesto was founded in 2006 with plans to develop a non-volatile memory based on the movement of copper ions in a programmable metallization cell. The technology was licensed from Axon Technologies Corp., a spinoff of Arizona State University. The company was one of the only ones, out of a slew of competitors, to bring a resistive RAM to market.
Although Dongbu Group sought to sell off its foundry back in 2013 the company has undergone a strategic shift involving a change of name to DB Group and now states that it intends to continue to invest in its DB HiTek foundry operation.
“CBRAM can provide cost and performance benefits not only for advanced processes, but also for mature processes like 180nm, where there continues to be significant and steady volume,” said Venkatesh Gopinath, vice president of CBRAM technology and products at Adesto, in a statement.
Next: Review and availability
In the same statement Benjamin Sun, vice president of marketing at DB HiTek, said: “After extensive review, we chose Adesto’s CBRAM technology as our embedded NVM at 180nm. As compared to conventional embedded flash technologies, this technology operates at lower voltages, consumes less power and requires fewer processing steps. Looking ahead, we also see CBRAM as a compelling option for automotive applications because of its high reliability and temperature tolerance.”
CBRAM will be available for use by DB HiTek customers as an embedded NVM at 180nm beginning in the second half of 2019, Adesto said.
Related links and articles: