Advanced dual-channel LNA targets 5G and TDD mMIMO

Advanced dual-channel LNA targets 5G and TDD mMIMO

New Products |
By Jean-Pierre Joosting

Tagore Technology has introduced the TSL8329M multichip module comprising a dual-channel ultra-low noise amplifier (LNA) with an integrated RF switch. Designed for demanding applications, the module operates from 3.3 GHz to 4.2 GHz. This dual channel module is architected with cascading, two-stage LNA and a high-power GaN-based fail-safe RF switch. The TSL8329M is well-suited for 5G infrastructure and TDD massive MIMO system.

“With integrated dual-channel RF front end, the high performance TSL8329M is well suited for the most demanding 5G infrastructure radios, small cells and massive MIMO system. The footprint and pinouts allow easy adaption in complex MIMO configurations”, said Klaus Buehring, Tagore Technology’s Chief Marketing Officer.

The TSL8329M has NF of 1 dB with 32 dB of gain at 3.6 GHz with an output third-order intercept point (OIP3) of 35 dBm. In bypass mode, the LNA provides 13 dB of gain. In power-down mode, the device draws 5 mA. In transmit operation, when RF inputs are connected to a termination pin (TERM-CHA or TERM-CHB), the switch provides a low insertion loss of 0.45 dB at 3.6 GHz and handles LTE average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation. The device comes in a RoHS compliant, compact, 6- × 6-mm, 40-lead LFCSP.

Recently, Tagore Technology also introduced a family of LNAs and companion linear power amplifier (PA) driver. The family of devices is tunable from 100 MHz to 5 GHz and operates from 2.7 V to 5 V supply. These devices are well-suited for a broad range of applications including 5G infrastructure and high-performance Satellite Digital Audio Radio Service (SDARS). The TL0374J and TL0375J are ultra-low noise figure LNAs utilizing an advanced pHEMT Gallium Arsenide (GaAs) process technology. The TL0374J is optimized for below 3 GHz frequency bands and the TL0375J is optimized for above 3 GHz frequency bands. Ultra-low noise figure LNAs offer a noise figure of 0.35 dB and gain of 18 dB with adjustable bias current through an external resistor.

The TP0310K is a linear PA driver with gain of 17 dB, OP1dB of 27 dBm and OIP3 of 39 dBm at 2 GHz.

Klaus Buehring, Tagore Technology’s Chief Sales and Marketing officer said: “The new ultra-low noise amplifier and linear PA driver device deliver a very low NF, high Linearity and good gain required for high performance receivers such as 5G infrastructure and SDARS. Our applications team has developed custom tuning for broad range of application at 5-V/60-mA and 3-V/30-mA bias for common cellular band frequencies which can be adopted by our customers.”

The ultra-low noise amplifiers are available in a 2×2 DFN package and the linear PA driver is available in a compact 3- x 3-mm QFN package. Samples and evaluation boards are available now for all devices.

If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News


Linked Articles