Advanced Power Electronics Corp. launches dual n- and p-channel MOSFETs for battery management applications
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eeNews Europe
Both MOSFETs feature low on-resistance, 16 mΩ for the AP9922GEO-HF-3 and 25 mΩ for the AP9923GEO-HF-3, and both devices are capable of operating with gate drive down to 1.8 V. RoHS-compliant and halogen-free, the devices are available in the small, thin TSSOP-8 package.
More information about the AP9922GEO-HF-3 and AP9923GEO-HF-3 MOSFETs at www.a-powerusa.com/docs/AP9922GEO-3.pdf and www.a-powerusa.com/docs/AP9923GEO-3.pdf
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