All-SiC half-bridge power module integrates gate driver

All-SiC half-bridge power module integrates gate driver

New Products |
By Julien Happich

The 62mm module represents a new generation of all-SiC power modules that enable unprecedented efficiency and power density for high current power electronics, such as: converters/inverters, motor drives, industrial electronics, and high performance electric vehicle systems. The new module allows systems designers to realize lighter weight systems that are up to 67% smaller by achieving efficiencies of over 98% and improvements in power density of up to 10 times compared to systems built with silicon-based technologies.

The superior thermal characteristics of SiC devices, along with the packaging design and materials, enable the module to operate at 175°C, which is a key advantage for many industrial, aerospace, and automotive applications. Module inductance is only 5.5nH, compared to competitive power products at 15nH, claims the manufacturer. Available as part number CAS325M12HM2, the power module is configured in a half-bridge topology comprised of seven 1.2kV 25mΩ C2M SiC MOSFETs and six 1.2kV 50A Z-Rec Schottky diodes. The companion gate driver (CGD15HB62LP) is specifically designed for integration with the module to fit within the 62mm mounting footprint. An engineering evaluation kit that includes both the module and the gate driver is also available so design engineers can quickly and easily test the performance of the new device in their systems.

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