AlN RF developer EasyGaN closes
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French aluminium nitride (AN) startup EasyGaN has closed after it failed to raise additional funding.
The company, based in Sophia Antipolis, was developing AlN layers on silicon wafers using molecular beam epitaxy (MBE) which offers more precise control of the structure of the materials than other techniques.
The technology developed at French research lab CRNS, creates layers three times thinner than traditional techniques for wafers that can be used by foundries and chip companies for the production of millimetre wave RF chips. It was also looking at developing a version using Gallium nitride (GaN), again for RF chips.
“Despite our best efforts, we were unable to secure the necessary investment to continue,” said EasyGaN CEO Andre Bonnardot, a former platform manager at Intel. “If you are interested in our AlN and GaN on Silicon technology developed through MBE, please reach out to Fabrice Semond at the CRHEA/CNRS laboratory, who hosted and supported us.”
The EasyGaN website has closed.
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