Analog and Microsemi team for high power isolated SiC gate driver board

Analog and Microsemi team for high power isolated SiC gate driver board

New Products |
By Nick Flaherty

The isolated board is engineered to improve design reliability while also reducing the need to create additional prototypes, saving time, lowering costs, and decreasing time to market for power conversion and energy storage customers.

The new board can be used as the building block of more complex topologies, such as full-bridge or multi-level converters, for complete bench debugging of customer solutions. It can also function as a final evaluation platform or in converter-like configuration for full test and evaluation of Analog Devices’ ADuM4135 isolated gate driver with iCoupler digital isolation technology and the LT3999 DC-DC driver in a high-power system.

The high-power evaluation board enables Microsemi’s SiC power modules to provide benefits such as a common test bench, higher power density for reduced size and cost, and isolated and conductive substrate and minimum parasitic capacitance for higher efficiency, performance, and excellent thermal management. These attributes make the board suitable for applications including electric vehicle (EV) charging, hybrid EV (HEV)/EV onboard charging, DC-DC converters, switched mode power supply, high-power motor control and aviation actuation systems, plasma/semi cap equipment, lasers and welding, MRIs and X-rays.

The independent High Side and Low Side PWM inputs have a single control with 70 ns dead-time for testing, >100 kV/µs common-mode transient immunity (CMTI) and 1.2 kV galvanic isolation from the optocopuler. The desaturation protection is fully tested and the boar dhas low inductive and high current terminals for V+, V- and AC phase connection. It supports Microsemi’s half-bridge SiC power modules housed in standard SP1 package as the APTMC120AM20CT1AG and APTMC120AM55CT1AG

The EV-MS4135PL1Z-UI is available for $495 via

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