Fabricating GaN-based LEDs on large diameter silicon wafers is recognised as a key path to reducing the cost of lighting systems and displays. Existing techniques used to manage the large mismatches in lattice parameter and thermal coefficient of expansion between silicon and GaN are complex and costly and to date have struggled to deliver materials suitable for high efficiency devices. The growth of GaN-based LED structures on SiC already well-established, high quality 3C-SiC on silicon produced using UK-based 3C-SiC on silicon power device developer, Anvil’s proprietary stress relief technology could provide an attractive alternative solution which can be readily migrated onto 150 mm diameter substrates and beyond.
The grant will fund work to produce and characterise typical GaN-based epilayers on Anvil’s 3C-SiC on silicon wafers. With Anvil’s process able to produce high quality 3C-SiC surfaces with orientation close to (100), the project will also explore the technology’s potential for producing the elusive cubic and non-polar form of GaN. If successful the project is expected to pave the way for further device benefits including improved LED efficiencies and lower power consumption displays.
“We’re delighted to have been given this opportunity to explore the potential for Anvil’s technology in another exciting market. If we’re successful we will be looking for partners to help us take it forward,” explained Jill Shaw, CEO of Anvil Semiconductors.
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