These builds on the support provided by ARM for 28nm FDSOI from Samsung (see ARM backs embedded MRAM on Samsung’s FDSOI process) announced in 2018. The latest process, known as 18FDS, is also being supported by POP packages for Cortex-A55, -R52 and -M33 processor cores.

The combination of 28FDS and eMRAM non-volatile memory has brought opportunities around IoT applications. The inclusion of 18FDS is expected to open up power-sensitive applications in 5G, artificial intelligence (AI), automotive, as well as the Internet of Things (IoT), ARM said.

“We’re thrilled that Samsung Foundry has extended its successful collaboration on FDSOI technology from 28FDS process to 18FDS. With the new platform, 18FDS is a cost reduction solution with lower power and same back end of line as 14nm FinFET. It has RF and eMRAM support to enable the widest range of different applications,” said Umang Doshi, product marketing manager in the physical design group at ARM, in an article posted on ARM’s website.

“The enhanced PPA [power-performance-area] from our 18FDS process combined with ARM cores and Artisan physical IP will again bring the cost and time-to-market advantages to enable the competitive and differentiated SoC designs,” said Jaehong Park, executive vice president of design platform development at Samsung Electronics, in the same statement.

The Arm-Samsung 18FDS platform includes seven memory compilers, three logic libraries, two (1.8 and 3.3V) GPIO libraries, three POP IPs and the eMRAM memory compiler. For automotive applications its supports AEC-Q100 Grade 1 design requirements, and comes with ASIL-D support and an automotive safety package.

The platform will be available in late 2019, ARM said.

Related links and articles:

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ARM backs embedded MRAM on Samsung’s FDSOI process

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