Atomera adds dopant engineering to boost transistor performance

Atomera adds dopant engineering to boost transistor performance

Technology News |
By Peter Clarke

The technique, called MST SP, is an atomic-scale engineered material for improved in-channel electron mobility, partnered with a “smart” doping profile based on the company’s long-standing Mears Silicon Technology (MST).

MST was named after original company founder Robert Mears.

MST is typically used to deposit partial monolayers of oxygen on the silicon wafer surface. The introduction of these layers can be used to help enhance mobility and current flow in the x-y plane and reduce it in the z-direction which would typically be leakage current in transistors.

The MST SP breakthrough has applications beyond 5V analog to many other silicon devices, including planar CMOS devices, the company said. Many power management ICs and other BCD process devices use 5V switches.

“Many semiconductor makers continue to look for ‘More than Moore’ advancements like MST to help them with performance in critical industry products like 5V switches,’ said Scott Bibaud, Atomera’s CEO, in a statement. “Our latest MST SP technique provides a breakthrough improvement that is directly applicable to more than a third of our current customers’ applications. We believe that MST SP can also improve many other product areas and will be a key ingredient in high performance electronic devices of the future.”

When applied to mixed-signal and RF circuits the technology can provide die size reduction alongside improved analog performance and lower power.

Atomera was founded in 2001 by Robert Mears as Nanovis LLC to exploit nano-scale engineering of materials and was then called Mears Technologies before becoming Atomera in 2016. Mears had previously been the pioneer of the erbium-doped fiber amplifier.

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