Automotive power FET with 1.35mΩ on-resistance
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By
eeNews Europe
This MOSFET achieves RDS(ON) = max1.35mΩ at VGS=10V – the lowest RDS(ON) of any MOSFET currently available. It does so by combining UMOS9 trench technology that minimises RDS(ON) x A, with the DPAK+ package that reduces package resistance compared to conventional DPAK packaging.
DPAK+ packaging is compatible with standard DPAK designs, measures 6.5 by 9.5 mm and features copper clip technology that replaces the traditional bondwire connections with copper clips that have a large contact area and are attached directly to the chip metallisation. The MOSFET is also enhanced compared with previous generations in terms of Electro-Magnetic Capability (EMC) and switching performance.
Toshiba; www.toshiba.semicon-storage.com
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