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Automotive power MOSFET increases power density while reducing system size and cost

Automotive power MOSFET increases power density while reducing system size and cost

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By eeNews Europe



Applying IR’s benchmark COOLiRFET silicon technology, the 40 V AUIRF8736M2 offers a 40% improvement in on-state resistance (Rds(on)) compared to previous generation devices to help minimize conduction losses. The dual-side cooling Medium Can DirectFET2 power package delivers excellent thermal performance and low parasitic inductance.

The device is qualified according to AEC-Q101 standards, features an environmentally-friendly 100% lead-free package and RoHS compliant bill of materials, and is part of IR’s automotive quality initiative targeting zero defects.

Availability and Pricing

Pricing begins at $0.82 each for the AUIRF8736M2 in 10,000-unit quantities. Production orders are available immediately.  

More information about the AUIRF8736M2 power MOSFET at
www.irf.com/product-info/datasheets/data/auirf8736m2.pdf

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