Automotive power MOSFETs optimize piezo injection systems performance

Automotive power MOSFETs optimize piezo injection systems performance

New Products |
By eeNews Europe

Utilizing IR’s latest generation of proven automotive power MOSFET technology, the AUIRFR4292 and AUIRFS6535 extend the range of IR’s automotive-qualified MOSFET portfolio to breakdown voltage up to 300 V. The 250 V AUIRFR4292 offers a maximum Rds(on) of 345 mOhm in a DPAK package, and the 300V AUIRFS6535 features a maximum Rds(on) of 185 mOhm in a standard D2PAK package.

IR’s automotive MOSFETs are subject to dynamic and static part average testing combined with 100 percent automated wafer level visual inspection as part of IR’s automotive quality initiative targeting zero defects. AEC-Q101 qualification requires that there is no more than a 20 percent change in Rds(on) after 1,000 temperature cycles of testing. However, in extended testing IR’s new AU bill of materials demonstrated a maximum Rds(on) shift of less than 10% at 5,000 temperature cycles, showing the strength and ruggedness of the bill of materials.

The new devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials.

Availability and Pricing

Pricing begins at $0.46 for the AUIRFR4292 and US $0.71 each for the AUIRFS6535 respectively in 100,000-unit quantities. Production orders are available immediately.

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