Automotive-qualified 40V n-channel power MOSFETs in compact package
The new MOSFETs, designated TPHR7904PB and TPH1R104PB, are manufactured in the ninth generation Trench-U-MOS-IX-H process and supplied in a small, low-impedance housing. They offer a maximum forward resistance (RDS(ON)) of 0.79mΩ at UGS = 10V, which reduces forward losses. The devices are specified with a drain source voltage (UDSS) of 40V and can process drain currents (ID) of up to 150A DC. The U-MOS-IX-H design also reduces switching noise and thus electromagnetic interference (EMI).
The SOP-Advance package (WF) offers wettable connection pins that enable automated visual inspection of solder joints on printed circuit boards – an essential prerequisite for the high quality requirements in the automotive sector.
More information: www.toshiba.semicon-storage.com.