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BMS taps 100V bi-directional GaN technology

BMS taps 100V bi-directional GaN technology

Technology News |
By Nick Flaherty



Chinese power chip maker Innoscience Technology has launched , a new generation of battery management system (BMS) designs based on 100V bidirectional gallium nitride (GaN) technology.

GaN can improve battery safety and efficiency, battery protection system (BMS) designs with higher efficiency, power density and thermal performance, improving the overall conversion efficiency of power systems.

With no parasitic body diode and bidirectional control, one bi-directional GaN device can effectively replace two traditional MOS Silicon pairs in Over Voltage Protection (OVP) and industrial BMS applications under 100V.

The VGaN technology supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation and has a low gate charge of 90nC.

A 48V/180A BMS demonstrator supports a high-side same-port BMS using a 100V VGaN device, the INV100FQ030A. This is packaged in a 4mm x 6mm2 FCQFN with a maximum on-resistance of 3.2mΩ.

The 16-string charging and discharging battery protection system uses the controllable bidirectional conduction and cut-off features of VGaN, enabling four operational states: normal charging and discharging, charging protection, discharging protection, and sleep mode.

No heat sink is required as the maximum temperature rise is less than 50°C for home batteries, portable charging station, e-scooters and e-bikes, optimising battery life and safety through efficient charge and discharge control.

“With just 16 VGaNs, we can replace 18 pairs of Silicon MOSFETs (36 in total), significantly reducing both the board area and system loop impedance. This optimization not only enhances performance and reduces system size but also drives down the overall system cost, making it a more efficient and cost-effective solution for battery protection systems,” said Dr. Denis Marcon, General Manager, Innoscience Europe.

www.innoscience.com

 

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