Bourns has entered the market for silicon IGBT power devices with a family of 650V trench-based devices for power supplies.
While silicon insulated-gate bipolar transistor (IGBT) devices are seen as falling behind MOSFETs built on silicon carbide or gallium nitride (GaN), the Bourns high-efficiency 600 V/650 V line is co-packaged with a fast recovery diode (FRD).
The five Model BID devices lower collector-emitter saturation voltage (VCE(sat)) and lower switching losses compared to previous generation non-punch-through IGBTs. In addition, this structure provides a positive temperature coefficient that helps increase device longevity and reduce power requirements in high voltage and high current designs.
This enables the IGBTs to be available in thermally-efficient TO-252, TO-247 and TO-247N packages with a lower thermal resistance Rth(j-c), making them ideal solutions for switch-mode power supplies (SMPS), uninterruptible power sources (UPS), induction heating and power factor correction (PFC) applications.
There are four voltage/current model options in 600 V/5 A, 600 V/20 A, 600 V/30 A and 650 V/50 A, and the devices have been tested and qualified to JEDEC standards for power switching products.
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