Bourns launches its first SiC Schottky Barrier Diodes

Bourns launches its first SiC Schottky Barrier Diodes

Business news |
By Nick Flaherty

Bourns has developed its first Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs).

The 600V to 1200V SiC SBD range consists of six models aimed at telecom/server Switched-Mode Power Supplies (SMPS), photovoltaic inverters, PC power and motor drives with low forward voltage (VF) and high thermal conductivity. This increases the efficiency while lowering power dissipation, satisfying application requirements of 650 V and 1200 V solutions.

The series also has no reverse recovery current in order to reduce EMI, enabling these SiC SBDs to significantly lower energy losses. In addition to offering 650 V to 1200 V operation with currents in the 6-10 A range, the six SBD devices offer various forward voltage, current and package options including TO220-2, TO247-3, TO252, and DFN8x8.

The six Model BSD SiC SBDs are available now. These models are RoHS compliant, halogen free, Pb free and the epoxy potting compound is flame retardant to the UL 94V-0 standard.


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