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Broadband 18 GHz UltraCMOS® RF switches beat GaAs

Broadband 18 GHz UltraCMOS® RF switches beat GaAs

New Products |
By eeNews Europe



The company’s latest switches uniquely offer test-and-measurement, wireless backhaul and military systems designers additional features, such as broad bandwidth, low-frequency power handling, high ESD protection and a fast settling time.

“Peregrine is reaching high-frequency performance levels previously considered unachievable in RF SOI,” says Kinana Hussain, senior marketing manager. “Our in-house, high-frequency design expertise coupled with our UltraCMOS technology has enabled Peregrine to break the 13 GHz RF SOI barrier last year and expand our high-frequency portfolio to 18 GHz today with a roadmap to many more high-frequency components.”

Peregrine’s entire high-frequency portfolio features high linearity that meets or exceeds GaAs switch performance across the entire frequency band. Because they are based on UltraCMOS technology, the components in the portfolio feature several attributes that GaAs technology cannot match, including:

  1. Broad bandwidth that maintains performance across the frequency range;
  2. Low-frequency power handling that maintains signal fidelity as the power passes through;
  3. Fast settling time that avoids the gate-lag phenomenon;
  4. High linearity of 58 dBm (IIP3) that ensures minimal signal compression;
  5. High ESD rating that offers four times more protection;
  6. Low power consumption that uses less than 5 percent power.

In addition to these advantages, the UltraCMOS PE42542 and PE42543 18 GHz RF switches offer standard 1.8 V and 3.3 V input logic control and consistent performance across a wide, 2.3 V to 5.5 V supply range. For special RF requirements, PE42543 sports a fast switching time of 500 ns.


The PE42542 and PE42543 are single-pole four throw (SP4T) RF switches accommodating a frequency range between 9 kHz and 18 GHz and offering low-frequency power handling of 10 dBm at 9 kHz. The switches also offer consistent performance across a wide supply range with no drift in insertion loss and phase. Both switches feature 120-microampere power-supply-current consumption, which is a fraction of what is required by competing GaAs switches.

The PE42542 has a high linearity of 58 dBm IIP3 and 118 dBm IIP2, a fast switching time of 3 microseconds and a high ESD rating of 3.5 kV HBM, 150V MM and 500V CDM on all pins. Its fast settling time of 7 microseconds eliminates gate lag in test-and-measurement equipment.

The PE42543 has a high linearity of 59 dBm IIP3 and 113 dBm IIP2, a fast switching time of 500 ns, a fast settling time of 2 microseconds and a high ESD rating of 2.5 kV HBM, 150V MM and 250V CDM on all pins.

Samples, evaluation kits and volume-production parts are available now. The devices are offered in a RoHS compliant, 29-lead 4×4 mm LGA package.

www.psemi.com

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