CGD announces breakthrough 100 kW+ GaN EV technology
Cambridge GaN Devices (CGD) has disclosed further details about a solution that will enable the company to cater to EV powertrain applications exceeding 100 kW — a market valued at over $10 billion — using its ICeGaN® gallium nitride (GaN) technology.
Combo ICeGaN® combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximising efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) products. ICeGaN technology brings the benefits of GaN to DC-to-DC converters, on-board chargers and potentially traction inverters. Combo ICeGaN further extends the benefits of CGD’s GaN technology into the rich 100kW+ traction inverter market.
The proprietary Combo ICeGaN approach leverages the fact that ICeGaN and IGBT devices can be operated in a parallel architecture having similar drive voltage ranges, such as 0-20 V. The technology also offers excellent gate robustness. In operation, the ICeGaN switch is very efficient, with low conduction and low switching losses at relatively low currents (light load) while the IGBT is dominant at relatively high currents (towards full load or during surge conditions).
Combo ICeGaN also benefits from the high saturation currents and avalanche clamping capability of IGBTs as well as the efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT starts to conduct at lower on-state voltages, supplementing the current loss in the ICeGaN. Conversely, at lower temperatures, ICeGaN will take more current. Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices.
Dr Giorgia Longobardi, Founder and CEO of CGD, stated: “Today, inverters for EV powertrains either use IGBTs, which are low cost but inefficient at light load conditions, or SiC devices, which are very efficient but also expensive. Our new Combo ICeGaN solution will revolutionise the EV industry by intelligently combining the benefits of GaN and silicon technologies, keeping costs low and maintaining the highest levels of efficiency, which, of course, means faster charging and longer range. We are already working with Tier One automotive EV manufacturers and their supply chain partners to bring this technology advancement to the market.”
To summarise, Professor Florin Udrea, Founder and CTO of CGD, states: “Having worked for three decades in the field of power devices, this is the first time I have encountered such a beautifully complementary technology pairing. ICeGaN is extremely fast and a star performer at light load conditions while the IGBT brings great benefits during full load, surge conditions and at high temperatures. ICeGaN provides on-chip intelligence while the IGBT provides avalanche capability. They both embrace silicon substrates which come with cost, infrastructure and manufacturability advantages.”
ICeGaN ICs have been proven to be very robust, while IGBTs have a proven track record in traction and EV applications. CGD has also proven similar, proprietary parallel combinations of ICeGaN devices with SiC MOSFETs, but Combo ICeGaN—which is now detailed in a published IEDM paper—is a far more economical solution. CGD expects to have working demos of Combo ICeGaN at the end of this year.
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