CGD shows 800V EV power design
Cambridge GaN Devices (CGD) has worked with IFP Energies nouvelles (IFPEN) in France on a three level power inverter for electric vehicles using its integrated gallium nitride power device. A reference design will bew shown at the PCIM power exhibition and conference in Nuremberg, Germany, next month.
The combo device combines ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM as an alternative to more expensive silicon carbide (SiC) devices.
The ANPC EV inverter for 800 V traction develops 100 kW using the ICeGaN combination devices in parallel. The three level Active Neutral Point Clamped (ANPC) inverter topology increases inverter efficiency, lowers THD and reduces dV/dt at the motor.
ANPC gives more flexibility in controlling power losses and improving output voltage waveform quality compared to traditional neutral-point clamped (NPC). The lower switching losses enable a power density of 25 to 30 kW/l.
The dual-side cooled DHDFN package with dual-gate pinout simplifies PCB routing, and ICeGaN’s integrated control circuitry supports current sharing. Clean switching allows for full current (400 V, 120 A) in double-pulse test.
The 650 V 25 mΩ full bridge 4-10 kW reference design uses double side cooling to reduce the thermal resistance enabling the highest power density.
This uses the fact that ICeGaN and IGBT devices can be operated in a parallel architecture having similar drive voltage ranges (e.g. 0-20V) and excellent gate robustness. In operation, the ICeGaN switch is very efficient, with low conduction and low switching losses at relatively low currents (light load), while the IGBT is dominant at relatively high currents (towards full load or during surge conditions).
The Combo ICeGaN also benefits from the high saturation currents and the avalanche clamping capability of IGBTs and the very efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT will start to conduct at lower on-state voltages, supplementing the loss of current in the ICeGaN, while at lower temperatures, ICeGaN will take more current.
Sensing and protection functions are intelligently managed to drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of both ICeGaN and IGBT devices in the EV inverter reference design.
“CGD’s latest P2 series ICs feature RDS(on) levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency,” said Giorgia Longobardi, founder and CEO of CGD.
“Today, an inverter for an EV powertrain uses either IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our Combo ICeGaN solution will revolutionise the EV industry by intelligently combining the benefits of GaN and silicon technologies, keeping cost low and maintaining the highest levels of efficiency which, of course, means faster charging and longer range. We are already working with Tier One automotive EV manufacturers and their supply chain partners to bring this technology advancement to the market,” she said.
“With Combo ICeGaN, our technology roadmap has been extended to address EV applications to over 100kW, and we are sure that designers will be inspired by the new capabilities ICeGaN delivers. We have built a secure supply chain including manufacturing deals with TSMC and ASE, and distribution through Digi-Key.”
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
