Chinese foundry launches 6in SiC process

Chinese foundry launches 6in SiC process

Business news |
By Nick Flaherty

The Fujian-based company is the first Chinese operation to provide a dedicated capacity for its 6in SiC wafer processing services alongside III-V compound manufacturing of gallium arsenide (GaAs), gallium nitride (GaN), and indium phosphide (InP).

“We are delighted to expand our wafer foundry services to now include SiC and make it commercially available to the wide bandgap semiconductor market world-wide”, said Raymond Cai, Chief Executive Officer of Sanan IC. “We see tremendous business opportunities in serving the high growth power electronics market with SiC displacing silicon solutions due to its higher efficiency, higher switching frequency, and higher temperature characteristics. The enormous growth of the automotive, big data, renewable clean energy, and power utility industries has created opportunities for us to offer SiC foundry services to the global market. Leveraging our state-of-the-art manufacturing plants, robust supply chain, and worldwide team of industry veterans makes Sanan IC the ideal foundry partner”.

The company is offering device structures for 650V, 1200V and higher-rated Schottky Barrier Diodes (SBD), and plans to have a SiC MOSFET process for 900V, 1200V, and higher. SiC provides higher efficiency, increased power density, higher switching frequency, higher temperature, higher breakdown strength, more compact and lighter system design than silicon devices. The adoption of SiC has accelerated into multiple markets such as in photovoltaic solar cells, industrial motor drives, power factor correction (PFC) for enterprise server, telecom base station power supplies. In electric vehicles (EV) and hybrids (HEV), SiC is widely used on the on-board charger (OBC), power train inverters, and DC/DC converters.  

According to Yole Développement (Yole), a leading technology market research firm, part of Yole Group of Companies, the SiC power device semiconductor market is forecasted to have a value over $1.5bn by 2023 with a compound annual growth rate (CAGR) of 31% from 2017 to 20231. Sanan IC is poised to meet the customers’ demands for quality, volume, ramp, and reliability.

Sanan was founded in 2014, and is based in Xiamen City in the Fujian Province of  China, operating as a subsidiary of Sanan Optoelectronics.

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