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Chinese startup comes west with GaN-on-Si offer

Chinese startup comes west with GaN-on-Si offer

Business news |
By Peter Clarke


The company, which operates two 200mm GaN-on-Si wafer fabs in China, has now opened design and sales support facilities in Santa Clara, California, and Leuven, Belgium. “We stand ready to deliver the security of supply needed by the industry,” said Jay Son, CEO of Innoscience, in a statement.

Innoscience Technology Co. Ltd. (Suzhou, China) was founded in December 2015 with investment from South Korea’s SK Group, Arm Ltd., China Merchants Bank International and Contemporary Amperex Technology Co. Ltd. (CATL). The company has partnered with research institute IMEC  and semiconductor equipment suppliers ASML Holding NV and Aixtron SE.

The company opened its first 200mm wafer fab for GaN-on-Si production in Zhuhai in November 2017 and second wafer fab in Suzhou in September 2020. Currently the company has a capacity of 10,000 8-inch wafers per month which will ramp up to 14,000 8-inch wafers per month later this year and 70,000 8-inch wafers per month by 2025.

The company has devices from 30V to 650V voltage and has shipped more than 35 million parts for use in applications including USB chargers/adapters, data centers, mobile phones and LED drivers.

Innoscience produces normally-off enhancement-mode GaN FETs. It claims that by introducing a stress enhancement layer, it has been able to significantly reduce RDSon without affecting other parameters including threshold voltage and leakage. Both epitaxy and device processing have been optimized to obtain high reproducibility and yield.

Next: Won’t be beaten on price


“We will surpass anyone on price for an equivalent device and our huge manufacturing capacity means that our customers are assured of security of supply, which is often uppermost in people’s minds given the shortage of chips at the moment,” said Denis Marcon, general manager of Innoscience Europe, in the statement. “We look forward to working with any company in order to proliferate gallium-nitride throughout the global electronics industry.”

Innoscience has more than 1,400 employees, more than 300 R&D engineers and is developing GaN power devices for use in diverse applications including: cloud computing, electric vehicles and automotive electronics, portable devices, mobile phones, chargers and adapters.

Related links and articles:

www.innoscience.com

News articles:

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Navitas opens China design centre for data centre GaN power

Infineon, Panasonic team for 650V GaN chips on 200mm wafers

Transphorm ramps up $33m funding for GaN expansion


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