Class D/E RF MOSFET driver generates nanosecond rise-time pulses
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eeNews Europe
The IXYS RF IXRFD631 employs a Kelvin ground connection on the input allowing the use of a common mode choke to avoid ground bounce problems. Capable of sinking 30 A of peak current, the IXRFD631 can produce voltage rise and fall times of less than 4 ns and minimum pulse widths of 8 ns.
The driver input is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. Low quiescent current and a wide operating voltage range make the device suitable for applications such as pulse generators, pulse laser diode drivers and switch mode supplies where the low inductance RF package minimises stray lead inductances for optimum switching performance.
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