CMC base laminate packages to accomodate high-power GaN and MMIC devices
The packages can now accommodate large MMICs, with die attach areas as high as 5.92- x 12.14-mm. They operate at frequencies from DC to as high as 63 GHz for applications in communications, radar, automotive, aerospace, defense, and those requiring high power millimeter-wave signals.
In addition to the packages, StratEdge offers complete automated assembly and test services for these packages, including gold-tin solder die attach. These assembly processes routinely generate >96% void-free attachment with bond line thicknesses of <6 microns when used with the new LL series of packages. This is particularly important for GaN power amplifiers where efficient thermal transfer is critical for improved operation and reliability of the device.
The LL family of CMC-base packages dissipate heat from high-power compound semiconductor devices, such as gallium nitride (GaN), gallium arsenide (GaAs), and silicon carbide (SiC). Both leaded and leadless versions of these packages are available. Standard transistor packages are 0.8 inch (20.32 mm) long x 0.23 inch (5.84mm) wide with 2 leads and a raised lid with an epoxy seal. Packages are either flangeless, with a fully hermetic seal and a flat ceramic lid, or flange packages, with a bolt hole on each end so the package can be bolted to the printed circuit board. These laminate power packages are built with a base material ratio of 1:3:1 CMC, which provides a good thermal match for alumina-based materials and a GaN chip.
“StratEdge was one of the first to market with laminate power packages for GaN devices,” said Tim Going, StratEdge president. “StratEdge has continued to develop packages to handle the requirements of new materials and devices. Our LL family additions can handle frequencies up to 63 GHz and large MMIC devices, and our precision automated assembly and test services enable the chips to operate with the efficiency and electrical integrity they were designed to achieve.”
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