Compact, automotive-qualified 600-V gate drive IC simplifies and shrinks designs
The AUIRS2332J, high-voltage, high speed power MOSFET and IGBT driver features three independent high- and low-side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction with logic inputs compatible with CMOS or LSTTL outputs, down to 3.3 V logic.
The new device also offers an integrated ground-referenced operational amplifier to provide analog feedback of the bridge current via an external current sense resistor, current trip function, and open drain FAULT signal to indicate over-current or under-voltage shutdown. The IC is housed in a PLCC44 package, providing higher creepage distances between high voltage pins, simplifying PCB layout.
The AUIRS2332J is fully characterized for negative transients on the switching node that may occur during normal operation and protection mode for increased system robustness. The device’s output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channel can be used to drive N-channel power MOSFET or IGBT in the high-side configuration.
IR’s automotive grade IC products are subject to dynamic and static part average testing combined with 100 percent automated wafer level visual inspection as part of IR’s automotive quality initiative targeting zero defects. The devices are qualified according to AEC-Q100 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials.
Pricing for AUIRS2332J begins at $3.34 each in quantities of 10,000-units. Production quantities are available immediately. The devices are lead free and RoHS compliant.
More information about the AUIRS2332J gate driver IC at
www.irf.com/product-info/datasheets/data/auirs2332j.pdf
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