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Compact bi-directional ESD diode for portable designs

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By Nick Flaherty


As the DF2B7ASL features a snapback characteristic, it can provide low clamping voltages, which together with the low dynamic resistance of the diode ensures superior protective performance to safeguard semiconductors ICs against static electricity. With a package footprint under 1mm2, it is aimed at interfaces in smart phones, wearables and other battery powered equipment.

While featuring low dynamic resistance of just 0.2Ω and a low clamping voltage (VC) of 11V at 5V signal lines (VRWM ≤ 5.5V), the DF2B7ASL still offers an electrostatic discharge voltage rating of +/-30kV in accordance with IEC61000-4-2 (contact discharge).

Taking the need for small footprints into consideration, the diodes are supplied in a SOD-962 (SL2) package with a board mounting footprint of 0.32mm x 0.62mm.

www.toshiba.semicon-storage.com


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