Compact high power GaN SSPAs
These solid-state power amplifiers are based on GaN devices, and offer state-of-the-art pulsed power performance coupled with a power-to-volume ratio that the company believes to be among the highest in the industry for such products. Pulsed power output levels of up to 150 W have been achieved. The designs are flexible in layout and architecture, and are fully customisable to meet individual specifications for electrical, mechanical and environmental parameters. Amplifiers with pulsed power outputs in excess of 1 kW, and with multi-octave bandwidths, are also under development.
An example of a Ku-band amplifier was displayed on the company’s booth at the International Microwave Symposium (IMS 2013), having a peak pulsed output power of 125 W at 16.5 GHz and a 1 dB bandwidth of 1.5 GHz in a space outline that is similar in size to a smartphone.
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