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Cost-competitive 1W LED manufactured on 200mm silicon wafer

Cost-competitive 1W LED manufactured on 200mm silicon wafer

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By eeNews Europe



LED-chips are typically produced on 2- to 4-inch wafers with an expensive sapphire substrate. Toshiba and Bridgelux, Inc. have developed a process for manufacturing gallium nitride LEDs on 200mm silicon wafers, which Toshiba has brought to a new production line at Kaga Toshiba Electronics Corporation, a discrete products manufacturing facility in northern Japan. The new gallium nitride-on-silicon (GaN-on-Si) technology has enabled Toshiba to replace sapphire substrates and to produce the LED-chips on a much more cost-competitive silicon substrate.

TL1F1 series LEDs measures 6.4×5.0x1.35mm, has a high luminous flux ranging from 85 lm to 112 lm (typical) at IF = 350 mA and a high colour rendering index of Ra= 80 (minimum.). The colour temperature of the white LEDs ranges from 3000 to 5000K. Reflow soldering is also available.

Designed for an operating temperature range from -40 up to +100°C, the new 1W LEDs are well suited for general lighting applications, bulbs, ceiling lighting, street lights and floodlights.

Visit TTI at www.ttieurope.com

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