Cree introduces 150-mm 4HN silicon carbide epitaxial wafers
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By
eeNews Europe
SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications. The 150-mm diameter single crystal SiC substrates will enable cost reductions and increased throughput, while bolstering the continued growth of the SiC industry.
The 150-mm 4H n-type SiC epitaxial wafers are available for immediate purchase in limited quantities.
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