Cree launches into drivetrains with 1200V SiC MOSFET
“There is a growing global demand for more electric vehicles on the road, with nearly all vehicle manufacturers announcing new electric platforms across their fleets,” said Gregg Lowe, CEO of Cree. “Cree is at the forefront of enabling this dramatic change in the automotive industry with new technologies, such as Wolfspeed’s new silicon carbide MOSFET portfolio, that help foster the adoption of electric vehicles.”
Wolfspeed launched the industry’s first 900V SiC MOSFET family in 2015 for EVs, reducing the cost barrier to SiC adoption in off-board and on-board chargers by delivering smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions. The 1200V M, 30AOSFET have an RDS(on) of 75mΩ at 25ºC and lower switching losses that company says will enable the world’s most efficient EV drivetrain systems.
“Wolfspeed’s expanded SiC portfolio will make it possible for auto suppliers and manufacturers to develop the EV ecosystem of the future,” said Cengiz Balkas, general manager of Wolfspeed. “Our components enable smaller, lighter systems that deliver more miles per charge. This allows us to bridge the gap between EVs and gas vehicles on cost and performance.”
Engineering samples are available to select customers and will be in full distribution later this year.
The company has also launched the industry’s first 1200V SiC diodes to be both automotive qualified and high-humidity/high voltage/high-temperature qualified at the PCIM show this week, as well as 20kW Two-Level AFE and 20kW DC-DC converters that use the C3M and a 6.6kW bi-directional on-board charger.
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