Fast and accurate, the new model effectively demonstrates the benefits of Cree SiC MOSFETs – including the C2M0025120D device, which recently pierced the on-resistance barrier by delivering 1200 V of blocking voltage with an on-resistance of 25 mOhms – in circuit simulations. Using this new SPICE model, circuit designers can easily take advantage of SiC benefits, including switching frequencies up to 10 times higher than IGBT-based solutions, which enables smaller magnetic and capacitive elements and subsequently shrinks the overall size, weight, and cost of power electronics systems.
To take full advantage of all the benefits of SiC technology, power converters must be redesigned specifically for SiC devices. SiC MOSFETs have different characteristics than silicon devices, and thus require SiC-specific models for accurate circuit simulations. Cree’s behavior-based and temperature-dependent SPICE model delivers accurate simulation results without compromising speed and includes self-heating and transient thermal capabilities. Valid for junction temperatures spanning 25°C to 150°C, the model allows power electronics design engineers to reliably simulate the advanced switching performance of Cree C2M products.
The family of C2M SiC MOSFET SPICE models extends Cree’s comprehensive suite of design-in support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement SiC power devices into the next generation of power systems.