Cree unveils 900-V SiC MOSFET

Cree unveils 900-V SiC MOSFET

By eeNews Europe

Optimized for high-frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the 900-V platform aims at enabling smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

According to Dr. Cengiz Balkas, vice president and general manager, Cree Power and RF, “When compared to equivalent silicon MOSFETs, this breakthrough 900-V platform enables a new market for our products by broadening the power range we can address in end systems. Following our 1200-V MOSFETs, which exhibit superior performance to high-voltage IGBTs, we are now able to outperform lower-voltage superjunction silicon MOSFET technology at 900 V. This platform delivers vastly superior characteristics, thereby providing power designers with the potential to innovate smaller, faster, cooler, and more efficient power solutions. Without question, it is beyond the reach of anything currently achievable with silicon.”

Built on Cree’s SiC planar technology, the 900-V MOSFET platform expands the product portfolio to address design challenges common to new and evolving application segments in which a higher DC link voltage is desirable. The lead product (C3M0065090J) claims the lowest on-resistance rating (65 mΩ) of any 900-V MOSFET device currently available on the market. Moreover, in addition to the industry standard TO247-3 and TO220-3 packages, the new device is also offered in a low-
impedance D2Pak-7L surface-mount package with a Kelvin connection to help minimize gate ringing.

Existing 900-V silicon MOSFETs have severe limitations for high-frequency switching circuits due to high switching losses and poor internal body diodes. Further limiting the use of silicon MOSFETs is the RDS(on) that increases 3x over temperature, which causes thermal issues and derating. Cree’s 900-V MOSFET technology delivers low RDS(on) at higher temperatures, enabling a significant size reduction of the thermal management system.

The C3M0065090J is rated at 900 V/32 A, with an RDS(on) of 65 mΩ at 25°C. At higher temperature operation (TJ = 150°C), the RDS(on is 90 mΩ. Packaged parts will be stocked through DigiKey and Mouser.

C3M0065090J SiC MOSFET information page
C3M0065090J SiC MOSFET datasheet (PDF)

Related articles and links:
SiC power devices gain traction among electric vehicles manufacturers
Toyota tests SiC technology in near-series designs
Cree releases SPICE models for SiC power MOSFETs

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