Danfoss in Denmark has signed ON Semiconductor as a supplier of high power silicon IGBT and diode devices for inverter traction modules.
The 12 inch fab in East Fishkill will provide a secure supply of devices, says ON Semiconductor. Another advantage it highlights is a robust set of modeling tools that enable designers to develop applications in simulation rather than costly measurement cycles.
Danfoss Silicon Power is a subsidiary of the Danfoss Group, and in June signed a key supply deal with Infineon Technologies for silicon IGBT devices for elecrtic vehicles: DANFOSS EXPANDS E-MOBILITY BUSINESS WITH INFINEON DEAL
“Chip independency is an important and fundamental element of the Danfoss go-to market strategy. By selecting IGBT chips from ON Semiconductor we are accommodating the high growth expectations from our automotive customers,” said Claus A. Petersen, senior vice president and general manager, Danfoss Silicon Power. “Our main objective is to develop world-class power modules, fitted exactly for the application in question. We are happy to have a long-term and robust relationship with ON Semiconductor.”
“With investment in power technologies and manufacturing capacity globally, ON Semiconductor reiterates our firm commitment to be the top supplier of automotive high power devices,” said Asif Jakwani, senior vice president of the Advance Power Division at ON Semiconductor. “Utilizing our semiconductor portfolio with Danfoss’ extensive experience in power module design and manufacturing, we expect our penetration in the vehicle electrification market to accelerate, benefitting both companies.”
ON Semiconductor will fabricate the high power components in manufacturing locations in East Fishkill, New York, and Bucheon, South Korea. Danfoss will fabricate their power modules in Flensburg, Germany, and Utica, New York.
“New Lifetime Prediction for SiC Power Modules based on Power Cycling test” – Presented by Alex Streibel, 7th July, 11:40-12:00
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