DC/DC converters target high voltage switching SiC MOSFET challenge
High potentials between the control and power side of a SiC MOSFET application can wear down isolation barriers, eventually causing them to fail.
The RxxP22005D and RKZ-xx2005D series come with 3 kVDC, 4 kVDC, and even 5.2 kVDC isolation to ensure that the isolation barrier stands up to even the harshest tests. Switching SiC MOSFETs requires turn-on and turn-off voltages which are not common for other IGBT or MOSFET applications. The RxxP22005D and RKZ-xx2005D series are available with input voltages of 5 V, 12 V, 15 V or 24 V and feature asymmetric outputs of +20 V and -5 V to efficiently and effectively switch the SiC MOSFET.
The converters come equipped with an ultra-low parasitic capacitance and power sharing capabilities, and they are all fully compliant to UL-60950-1, RoHS2, and REACH. High operating temperatures coupled with high-frequency switching make the SiC MOSFET harsh for power supplies.
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