DC/DC supplies for fast-switching GaN drivers
GaN devices need isolated high-side drivers and isolated driver power supplies with an insulation barrier that can cope with high switching voltages, demanding operating temperatures and fast slew rates. High slew-rate GaN transistor drivers require isolated +6V supplies with high isolation voltage and low isolation capacitance. The RP-xx06S and RxxP06S series offer an output voltage of +6V which is sufficient to efficiently switch GaN HEMTs without causing a gate dielectric breakdown. Typically, a safe DC/DC isolation voltage should be at least twice the working voltage, but the high ambient temperature and fast switching edges generated by these high-power transistors cause additional stress to the insulation barrier. Therefore, the internal transformer design of these converters uses a pot-core to physically separate the input and output windings providing up to 6.4 kVDC isolation to ensure that the isolation barrier stands up to even the harshest operating conditions. Despite the high isolation grade, they fit into an industry standard SIP7 case, thus saving space on the circuit board. These converters are available with input voltages of 5V, 12V, 15V or 24V and feature a low isolation capacitance (<10 pF). They are IEC/EN-60950-1 certified and fully compliant to RoHS2 and REACH. For certain GaN applications, where higher noise and transients have to be accommodated into the design, Recom also offers converters with +9V output, which can be split via a Zener diode circuit to +6V and -3V to also provide a negative switching gate voltage.
Recom Power; www.recom-power.com
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