DC/DCs have 5.2 kV isolation to power SiC MOSFET drivers
High potentials between the control and power side of a SiC MOSFET application can wear down isolation barriers, eventually causing them to fail. The RxxP22005D and RKZ-xx2005D series come with 3 kVDC, 4 kVDC, and 5.2 kVDC isolation to ensure that the isolation barrier stands up to even the harshest tests. Switching SiC MOSFETs requires turn-on and turn-off voltages which are not common for other IGBT or MOSFET applications. The RxxP22005D and RKZ-xx2005D series are available with input voltages of 5V, 12V, 15V or 24V and feature asymmetric outputs of +20V and -5V to efficiently and effectively switch the SiC MOSFET.
These converters come fully equipped with an ultra-low parasitic capacitance and power sharing capabilities, and they are all fully compliant to UL-60950-1, RoHS2, and REACH.
Recom Electronic; www.recom-electronic.com
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