DDR5 DRAM reaches 32Gbit capacity
Samsung has developed a 32Gbit DRAM in the DDR5 format made using 12nm manufacturing process technology.
Samsung began mass production of a 12nm 16Gbit DDR5 DRAM in May 2023. It is not clear whether the lastest component is monolithically integrated or includes two or more die within a single package.
The increased capacity component will allow the creation of 1Tbyte DRAM modules and memory sticks and will simplify the production of 128Gbyte modules, Samsung said.
“With our 12nm-class 32Gbit DRAM, we have secured a solution that will enable DRAM modules of up to 1Tbyte, allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI and big data,” said SangJoon Hwang, who is responsible for DRAM products and technology at Samsung Electronics.
Previously, DDR5 128GB DRAM modules manufactured using 16Gbit DRAM required the through silicon via (TSV) process technology
However, by using Samsung’s 32Gb DRAM, the 128GB module can now be produced without using the TSV process, while reducing power consumption by approximately 10 percent compared to 128Gbyte modules with 16Gbit DRAM.
Mass production of the new 12nm-class 32Gbit DDR5 DRAM is scheduled to begin by the end of 2023.
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