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Dedicated testing configuration for emerging memory technologies

Dedicated testing configuration for emerging memory technologies

Technology News |
By eeNews Europe



Aimed at new technologies such as STT-MRAM (spin transfer torque magnetoresistive random access memory), this configuration will, Keysight says, allow engineers to overcome challenges in conventional test environments. It supports precise and fast characterization of new memory, from DC measurement to high-speed pulsed IV measurement (down to 1 nsec); it offers 10 to 100 times faster cycle test, such as performing a bit error rate test (BERT); and it yields a clear visualization of the magnetic tunnel junction (MTJ) switching waveform

 

This dedicated solution, Keysight adds, aids researchers and engineers, “struggling with the characterization of MTJ devices on silicon wafers.” The company explains;

 

“STT-MRAM is getting a lot of attention as the preferred, next-generation high-performance non-volatile memory—such as the memory used in mobile and storage devices. MTJ is the most important component of STT-MRAM, with fast and accurate characterization of MTJ being key success factor for achieving a company’s time-to-market goals.

 

The NX5730A enables users to apply accurate and high-speed pulsed voltages (down to 1 nsec pulse width) to switch MTJ, and to precisely and quickly measure the resistance of MTJ before and after switching. In addition to resistance measurement, the NX5730A allows engineers to capture and visualize MTJ switching waveforms clearly during the writing pulse, even if the pulse width is very narrow (down to 1 nsec pulse). The NX5730A allows users to accurately and quickly perform all typical MTJ characterization tests in one solution. This includes BERTs, endurance tests, switching characteristics with various voltages and the width of writing pulses, switching time evaluation by visualizing switching waveforms, and DC tests (e.g., resistance-voltage characteristics). Keysight also provides customization support to control electromagnet equipment for characterization with magnetic fields.

 

“Keysight’s new NX5730A stems from a collaboration with Tohoku University’s Center for Innovative Integrated Electronic Systems (CIES) STT-MRAM activities which resulted in a successful outcome as announced in March of 2015,” said Masaki Yamamoto, general manager of Keysight’s Wafer Test Solutions. “Our customer experiences several challenges in MTJ characterization with conventional rack and stack-base test environments, such as a time-consuming BERT, inaccurate writing voltage and difficulty of high-speed pulsed IV, such as 1 nsec pulse widths.”

 

The NX5730A is designed to combine with a semi-automated prober to full-automated prober—for STT-MRAM research to early production.

 

Keysight; www.keysight.com/find/nx5730

 

 

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