MENU

Demo board showcases SiC JFETs in cascode half-bridge configuration

Demo board showcases SiC JFETs in cascode half-bridge configuration

New Products |
By eeNews Europe



In the cascode configuration, the JFET is driven via a source-connected MOSFET, allowing existing, commercially available MOSFET drivers to be used.

Normally-on SJDP120R085 1200 V power JFETs enable high-speed switching, are compatible with standard gate drive circuitry, and feature a positive temperature coefficient for ease of paralleling. The JFETs have a high saturation current (27 A), low on-resistance per unit area (85 mΩ max), and improved switching performance.

The demo board comes complete with Gerber files and a BOM to allow users to build their own circuits.

Visit SemiSouth Laboratories at www.semisouth.com

If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News

Share:

Linked Articles
10s