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Development board showcases 100-V enhancement mode eGaN FETs for high current demands

Development board showcases 100-V enhancement mode eGaN FETs for high current demands

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By eeNews Europe



In this application two low side (synchronous rectifier) FETs are connected in parallel since they will be conducting for a much longer period compared to the single high side (Control) FET.  eGaN FETs have superior current sharing capability compared to silicon MOSFETs, making them more attractive for parallel operation.  The development board expands upon EPC’s work on optimal layout based on ultra-low inductance packages.

The EPC9017 development board is a 100 V maximum device voltage, 20 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN) field effect transistor (FET).   The half bridge configuration contains a single top side device and two parallel bottom devices and is recommended for high current, lower duty cycle applications.  

The development board is 2 x 1.5 inch and contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

Availability and Pricing

EPC9017 development boards are priced at $130 each and are available for immediate delivery from Digi-Key at www.digikey.com/Suppliers/us/Efficient-Power-Conversion

A Quick Start Guide, https://epc-co.com/epc/documents/guides/EPC9017_qsg.pdf, is included with the EPC9017 development board for reference and ease of use.

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