Diodes launches its first SiC Schottky Barrier Diodes (SBD)
Diodes has launched its first Silicon Carbide (SiC) Schottky barrier diodes (SBD) with 650V and 1200V versions.
The portfolio includes the DSCxxA065 series with eleven products rated at 650V (4A, 6A, 8A, and 10A) and the DSCxx120 series with eight products rated at 1200V (2A, 5A, and 10A).
The SBDs are aimed at AC-DC, DC-DC, and DC-AC switching converters, photovoltaic inverters, uninterruptable power supplies, and industrial motor drive applications. These devices can also be used in a variety of other circuits, such as boost converters for power factor correction.
The efficient performance of these SiC devices are superior to those of conventional silicon-based products, and provide power supply designers with lower switching losses due to low capacitive charge (QC) that provide high efficiency in fast switching applications. This is suitable for circuit designs with higher power density and smaller overall solution size.
The low forward voltage (VF) further improves efficiency, reducing power losses and operational costs while the reduced heat dissipation that helps lower overall system cooling budgets.
A high surge current capability increases robustness for better system reliability, while excellent thermal performance reduces build costs.
The launch of the diode range is expected to be followed by SiC MOSFETs for the same reasons.
There are three package options including surface mount TO252-2 (Type WX), through-hole TO220AC (Type WX), and ITO220AC (Type WX-NC).
The DSCxxA065 and DSCxx120 series are available from $1.24 to $2.33 and $1.70 to $6.68 respectively in 1,000 piece quantities.
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