DIP-packaged photorelays replace relays up to 200V & 3A
Toshiba is supporting and promoting the accelerated replacement of mechanical relays by applying its latest trench MOSFET structure, 8th generation UMOS, to realize output currents exceeding 1A. Both devices offer an isolation voltage of 2500 Vrms and low values of on-resistance (TLP3823 60 mΩ typ., TLP3825 250 mΩ typ.) to ensure efficient operation. The rapid turn-on and turn-off times allow the photorelays to be used in fast switching applications. The required triggering current is below 5 mA for both devices and, when off, the devices have a leakage current of less than 1 μA. Toshiba’s new devices offer a guaranteed pulsed ON-state current that is three times larger than the continuous ON-state current, securing a bigger margin for safety design.