Diraq drives two-qubit gate accuracy in CMOS to above 99%
This represents the first silicon-CMOS based platform to reach the significant 99% milestone for two-qubit logic
Team Diraq can announce we have successfully demonstrated consistent and repeatable operation with above 99% fidelity of two-qubit gates in the SiMOS (silicon metal-oxide-semiconductor) quantum dot platform.
Consistent performance is key to the underlying integrity and capability of multi-qubit systems, with reliability and consistency in high-fidelity entangling operations between qubits being the key to future sustainable quantum performance.
This also represents the first silicon-CMOS based platform to reach the significant 99% milestone for two-qubit logic. For Diraq, achieving this benchmark represents a crucial step towards the protection against errors in solid state qubits, paving the way for realising more reliable silicon-based quantum devices.
It sends a positive signal that solid-state qubits, such as Diraq’s CMOS quantum dots, continue to demonstrate clear advantages, given their compatibility with the mass manufacturing techniques used for today’s silicon chips, promising scalability and cost-efficiency.
Commenting on the announcement Founder and CEO Andrew Dzurak said “Reaching this 99% two-qubit fidelity is a significant milestone in our technical program as it underpins the process for securing consistent and reliable performance in our SiMOS quantum dot qubits and further supports our core focus of scaling up our silicon spin-based qubits into full-scale fault tolerant quantum processors”.
The technical breakthrough is detailed in a study: Assessment of the errors of high-fidelity two-qubit gates in silicon quantum dots published in the journal Nature Physics.