Discrete 750V SiC MOSFET for industrial power
Infineon Technologies has developed a discrete 750V silicon carbide (SiC) MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications.
The CoolSiC G1 MOSFET family from Infineon includes both industrial-graded and automotive-graded 750V SiC devices optimized for totem-pole PFC, T-type, LLC/CLLC, dual active bridge (DAB), HERIC, buck/boost, and phase-shifted full bridge (PSFB) topologies.
The CoolSiC MOSFET 750 V G1 technology has a combination of high threshold voltage (V GS(th), Typ. of 4.3 V) with low Q GD/Q GS ratio ensures high robustness against parasitic turn-on and enables unipolar gate driving, leading to increased power density and low cost of the systems.
All devices use Infineon’s proprietary die-attach technology which delivers outstanding thermal impedance for equivalent die sizes. The highly reliable gate oxide design combined with Infineon’s qualification standards delivers robust and long-term performance.
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The portfolio ranges from 8 to 140 mΩ RDS (on) at 25°C for lower conduction and switching losses, boosting overall system efficiency. Its innovative packages minimize thermal resistance, facilitate improved heat dissipation, and optimize in-circuit power loop inductance, thereby resulting in high power density and reduced system costs.
The MOSFETs are aimed at both typical industrial applications, such as electric vehicle charging, industrial drives, solar and energy storage systems, solid state circuit breaker, UPS systems, servers/ datacentres, telecom, and in the automotive sector, such as onboard chargers (OBC) and DC-DC converters.
The CoolSiC MOSFET 750 V G1 for automotive applications comes in QDPAK TSC, D2PAK-7L, and TO-247-4 packages, while for industrial applications, QDPAK TSC and TO-247-4 packages are offered.
www.infineon.com/coolsic-mosfet-discretes
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