Discrete ReRAM goes into mass production

Discrete ReRAM goes into mass production

Technology News |
By Peter Clarke

The MB85AS4MT is an SPI-interface ReRAM that operates over a voltage range from 1.65V to 3.6V. It is a nonvolatile memory with an average current in read operations of 0.2mA at a maximum operating frequency of 5MHz. It offers a write endurance of 1.2 x 10^6 cycles and a claimed unlimited read cycles. Data retention is 10 years. The memory is suitable for battery-operated wearable devices, medical devices such as hearing aids and use alongside sensors and in IoT nodes, Fujitsu said.

The package is a 209mil 8 pin small outline package (SOP), pin-compatible with other non-volatile memory products such as EEPROM.

At present Fujitsu provides ferroelectric RAMs (FRAMs) and microcontrollers with FRAM on-chip. Fujitsu also recently announced that it is a licensee of carbon-nanotube memory technology from Nantero (see Fujitsu is licensee of Nantero’s carbon-nanotube RAM).

Panasonic has been shipping a microcontroller with ReRAM on-chip since 2012 but Panasonic, like many Japanese chip companies, has also been undergoing a transition and has disposed a number of wafer fabs to a joint venture with Tower Semiconductor Ltd. (Migdal Haemek, Israel).

The Panasonic MN101L microcontroller includes 64kbytes of ReRAM on-chip and is reportedly based on a layer of tantalum oxide as the variable resistance material. Fujitsu did not state what variable resistance material it is using for its discrete ReRAM, what geometry it is manufacturing at, or whether it has plans to include ReRAM in logic products in the future.

Related links and articles:

4Mbit ReRAM “MB85AS4MT” datasheet

News articles:

Sony revealed as MRAM foundry for Avalanche

Ferroelectric memory startup aims at GloFo’s 22FDX

Former Intel exec to chair ReRAM startup

TSMC turns logic FinFET into ReRAM

Fujitsu is licensee of Nantero’s carbon-nanotube RAM

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