Double-sided cooling boosts heat dissipation on 40V N-channel MOSFETs
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By
Nick Flaherty
The TPWR7904PB and TPW1R104PB mount a U-MOS IX-H series MOSFET with the latest trench structure into a DSOP Advance (WF) package. Heat generated by conduction loss is effectively dissipated, improving the flexibility of thermal design. The TPWR7904PB has an RDS(on) of 0.79mΩ at 10V while the TPW1R104PB is 1.14mΩ at 10V.
The 5.0×6.0×0.73mm DSOP Advance package also has a wettable flank terminal structure that allows automated inspection systems to be used effectively.
The AEC-Q101-qualified MOSFETs are aimed at electric power steering, load switches and electric pumps
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