Dual MOSFET for mobile device charger circuitry
SSM6N58NU has a maximum DC drain current (ID) of 4A and maximum pulsed drain current (IDP) of 10A. Because the gate charge and capacitance of the MOSFET is significantly reduced, fast switching is supported. The N-channel MOSFET ensures efficiency and switching speeds through a design that minimises ON resistance (RDS(ON)) and input capacitance (CISS). Input capacitance is as low as 129 pF, while RDS(ON) is 67mΩ at VGS=4.5V. This enables low loss and high speed operation with a turn-on time (ton) of 26 nsec, and a turn-off time (toff) of 9 nsec. The gate charge of Qg=1.8 nC (@ ID=4A) reduces the AC dissipation at 3 MHz enabling usage in DC converter applications. Independent MOSFET configuration and high ESD protection levels of ≥2 kV also enables usage in battery protection circuits.
The SSM6N58NU is supplied in a UDFN6 surface mount that requires 2 x 2mm of board space with a body height of 0.75 mm. Due to the flat body of the structure, this package offers a power dissipation of 2W and can withstand channel temperatures up to 150°C.
Toshiba Electronics Europe; www.toshiba-components.com
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