Dual-power-MOSFET package cuts losses, improves thermals

Dual-power-MOSFET package cuts losses, improves thermals

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By eeNews Europe

The IRFHE4250D reduces power losses by more than 5% at 25A compared to conventional power block devices; it features IR’s latest-generation silicon and expands the power block packaging platform with a 6 x 6 mm PQFN package with exposed top and slim profile for back-side mounting that, combined with its thermal performance, low on-state resistance (RDS(on)) and gate charge (Qg) delivers improved power density and lower switching losses to shrink PCB size and improve overall system efficiency.

At VDSS of 25V and VGS of 4.5V, the typical/maximum figures for on-resistance are 3.2/4.1 mΩ for the control FET, and 1.0/1.35 mΩ for the synchronous FET (“FETky”). Tpypical QG figures are, respectively, 13 and 35 nC.

The IRFHE4250D works with any controller or driver to offer design flexibility while delivering higher current, efficiency and frequency capability in a small footprint, and extends IR’s power block offering to a 6 x 6 PQFN package. It is qualified to industrial grade and moisture sensitivity level 2 (MSL2).

International Rectifier;

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