Dual power MOSFET reduces losses for DC-DC applications

Dual power MOSFET reduces losses for DC-DC applications

New Products |
By eeNews Europe

The 25 V device is targeted at 12 V input DC-DC synchronous buck applications including advanced telecom and netcom equipment, servers, graphic cards, desktop, Ultra book and notebook computers.

The IRFHE4250D features IR’s latest generation silicon and expands the power block packaging platform with a 6×6 PQFN package with exposed top and slim profile for back-side mounting that combined with excellent thermal performance, low on-state resistance (RDS(on)) and gate charge (Qg) delivers superior power density and lower switching losses to shrink PCB size and improve overall system efficiency.

As with all IR power block devices, the IRFHE4250D works with any controller or driver to offer design flexibility while delivering higher current, efficiency and frequency capability in a small footprint, and extends IR’s power block offering to a 6×6 PQFN package.

The IRFHE4250D is qualified to industrial grade and moisture sensitivity level 2 (MSL2), and is available in a 6×6 PQFN package with exposed top that features an environmentally friendly and RoHS compliant bill of materials.

Availability and Pricing

Pricing for the IRFHE4250D FastIRFET starts at $1.44 in 1,000-unit quantities. Production orders are available immediately.

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