Dual SiC MOSFET drivers, in distribution
These boards are developed for Cree by Prodrive Technologies and are production-ready, with all the features required for an IGBT module gate driver. Featuring a power supply range from 15V to 24V, the two single-board solutions provide different driving capabilities – the PT62SCMD12 is a 1200V driver, whereas the PT62SCMD17 is a 1700V driver. Each SIC MOSFET driver solution provides low jitter at 1nsec (typical), gate driving at +20V/-6V, switchable frequencies up to 125 kHz, and output currents up to ±20A with high dV/dt immunity. Both solutions require no optocouplers, and communicate through an RS422 input interface.
A built-in dead-time generator enables both solutions to be fully adjustable for both dead and blanking time. Other features of the PT62SCMDxx Dual SIC MOSFET Drivers include over-current protection and under- and over-voltage lockout.
The Cree PT62SCMD12 and PT62SCMD17 single-board solutions can control multiple MOSFETs in parallel, in HF resonant converters/inverters, solar and wind inverters, UPS and SMPS devices, motor drives and traction-based applications.
Mouser; www.mouser.com/new/cree/cree-pt62scmdxx-drivers/
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