Dual-side cooling package enables higher power density for MOSFETs
The STLD200N4F6AG and STLD125N4F6AG feature a nominal voltage of 40 V and are designed for motor control applications, for battery polarity reversal protection and as a powerful circuit breaker in automotive applications. In terms of footprint and thermally efficient design of the bottom, the PowerFLAT 5×6 DSC package is equivalent to the standard package. However, the source electrode is at the top to promote heat dissipation. The possible increase in the rated current results in a higher power density, so that designers can build more compact ECUs without sacrificing functionality, performance or reliability.
The STLD200N4F6AG and STLD125N4F6AG ensure a high energy efficiency with a maximum drain current of 120 A and maximum switch-on resistances of 1.5 mΩ and 3.0 mΩ respectively, and contribute to the simplification of the thermal management. With a total gate charge of 172nC or 91nC and low capacitances, the prerequisites for efficient switching with high frequencies are given.
The two 40 V MOSFETs are the first building blocks of a new product family based on STMicroelectronics’ STripFET F6 series of trench gate structure that will cover a wider range of nominal currents and voltages for automotive applications. The new devices are specified for operation under harsh conditions, for example in the engine compartment at temperatures of up to 175°C. The components are 100% avalanche-tested. They are offered in a housing with wettable flank connections to achieve optimum soldering properties and enable automated visual inspection.
The STLD200N4F6AG and STLD125N4F6AG are qualified according to AEC-Q101, and are available now. Later this year, ST plans to complement the family by STripFET F7 building blocks.
For more information, visit www.st.com/mosfets .
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
